Contact pad structure

ABSTRACT

A contact pad structure includes alternately stacked N insulating layers (N≧6) and N conductive layers, and has N regions arranged in a 2D array exposing the respective conductive layers. When the conductive layers are numbered as first to N-th from bottom to top, the number (Ln) of exposed conductive layer decreases in a column direction in the regions of any row, the difference in Ln is fixed between two neighboring rows of regions, Ln decreases from the two ends toward the center in the regions of any column, and the difference in Ln is fixed between two neighboring columns of regions.

BACKGROUND OF THE INVENTION

Field of Invention

This invention relates to a structure applicable to integrated circuits, and particularly relates to a contact pad structure for electrical connections of multiple levels of conductors.

Description of Related Art

In a three-dimensional (3D) device array, such as a 3D memory, the conductive lines of the respective levels of devices need electrical connection, so the conductive layers of the respective levels have to be exposed in a contact area for later electrical connection. As a result, a staircase contact pad structure is formed.

In order to form a staircase contact pad structure for N levels of devices, conventionally, N-1 photomasks are used to perform N-1 lithography and etching processes to remove different numbers of levels of conductive layers from N-1 regions in the contact area. However, such method is quite tedious and needs accurate process control for the tight pitch, so the manufacture cost and the process difficulty are increased.

SUMMARY OF THE INVENTION

Accordingly, this invention provides a contact pad structure that can be formed with much less than N-1 times of lithography and etching processes for N levels of devices.

The contact pad structure of this invention comprises alternately stacked N insulating layers (N≧6) and N conductive layers, and has N regions exposing the respective conductive layers. The regions are arranged in a P×Q array (P≧3, Q≧2). When the conductive layers are numbered from first to N-th from bottom to top and the conductive layer exposed in a region (i, j) is designated as an Ln_(i,j)-th conductive layer,

in the Q regions in the i-th row, Ln_(i,j) decreases with increase of the j value, satisfying the relationships of Ln_(i,1)>Ln_(i,2)> . . . >Ln_(i,Q),

a difference in Ln between the Q regions of the i-th row and the Q regions of the (i+1)-th row is fixed, satisfying the relationship of Ln_(i,1)−Ln_(i+1,1)=Ln_(i,2)−Ln_(i+1,2)= . . . =Ln_(i,Q)−Ln_(i+1,Q),

in the P regions of the j-th column, Ln_(i,j) decreases from two ends toward a center, satisfying the relationship of Ln_(i,j), Ln_(P,j)>Ln_(2,j), Ln_(P−1,j)> . . . , and

a difference in Ln between the P regions of the j-th column and the P regions of the (j+1)-th column is fixed, satisfying the relationship of Ln_(1,j)−Ln_(1,j+1)=Ln_(2,j)−Ln_(2,j+1)= . . . =Ln_(P,j)−Ln_(P,j+1).

In a first embodiment of the contact pad structure, substantially no insulating layer or conductive layer higher than the Ln_(i,j)-th conductive layer is present in the region (i, j).

In a second embodiment of the contact pad structure, in the region (i, j) other than the region exposing the N-th conductive layer, the Ln_(i,j)-th conductive layer is exposed in a contact hole formed in upper layers among the insulating layers and the conductive layers.

The contact pad structure of this invention may be disposed in a 3D memory.

Because the contact pad structure of this invention can be formed with much less than N-1 times of lithography and etching processes for N levels of devices, the formation process can be significantly simplified, and the process control is easier.

In order to make the aforementioned and other objects, features and advantages of this invention comprehensible, a preferred embodiment accompanied with figures is described in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a perspective view of a contact pad structure of an example according to a first embodiment of this invention.

FIG. 1B illustrates a top view of the contact pad structure illustrated in FIG. 1A, wherein the number Ln_(i,j) of the conductive layer exposed in each region and the number Tn_(i,j) of the conductive layer(s) requiring to be removed in each region are shown.

FIG. 2 illustrates an exemplary combination of photomask patterns and numbers of etched conductive layers that is capable of achieving the Tn_(i,j) distribution shown in FIG. 1B.

FIG. 3A illustrates a perspective view of a contact pad structure of another example according to the first embodiment of this invention.

FIG. 3B illustrates a top view of the contact pad structure illustrated in FIG. 3A, wherein the number Ln_(i,j) of the conductive layer exposed in each region and the number Tn_(i,j) of the conductive layer(s) requiring to be removed in each region are shown.

FIG. 4 illustrates an exemplary combination of photomask patterns and numbers of etched conductive layers that is capable of achieving the Tn_(i,j) distribution shown in FIG. 3B.

FIG. 5A illustrates a top view of a contact pad structure of an example according to a second embodiment of this invention, wherein the number Tn_(i,j) of the conductive layer(s) requiring to be removed in each region is shown.

FIG. 5B illustrates a B-B′ cross-sectional view of a contact pad structure of FIG. 5A.

DESCRIPTION OF EMBODIMENTS

This invention is further explained with the following embodiments, which are just exemplary but are not intended to limit the scope of this invention.

FIG. 1A illustrates a perspective view of a contact pad structure of an example according to the first embodiment of this invention. FIG. 1B illustrates a top view of the contact pad structure illustrated in FIG. 1A, wherein the number Ln_(i,j) of the conductive layer exposed in each region and the number Tn_(i,j) of the conductive layer(s) requiring to be removed in each region are shown. In the first embodiment of this invention, substantially no insulating layer or conductive layer higher than the Ln_(i,j)-th conductive layer is present in the region (i, j).

Referring to FIG. 1A and FIG. 1B, in the contact pad structure 100 of this example, 12 insulating layers 102 and 12 conductive layers 104 are alternately stacked, and the 12 regions exposing the respective conductive layers 104 are arranged in a 4×3 array. This corresponds to a case of N=12, P=4 and Q=3. The column direction and the row direction are designated as i-direction and j-direction, respectively, in the figures, but the i-direction and the j-direction are not necessarily the x-direction and the y-direction, or the y-direction and the x-direction, respectively, of the wafer. The conductive layers 104 are numbered as from first to 12-th (=N-th) from bottom to top. The number Ln_(i,j) of the conductive layer exposed in each region (i, j) (i=1-4, j=1-3) is shown in the left half of FIG. 1B, for example, Ln_(3,2)=6 for the region (3, 2). In the 3 (=Q) regions in the i-th row, Ln_(i,j) decreases with increase of the j-value, satisfying the relationships of Ln_(i,1)>Ln_(i,2)>Ln_(i,3). The difference in Ln between the 3 (=Q) regions of the i-th row and the 3 (=Q) regions of the (i+1)-th row is fixed, satisfying the relationship of Ln_(i,1)−Ln_(i+1,1)=Ln_(i,2)−Ln_(i+1,2)=Ln_(i,3)−Ln_(i+1,3). In the 4 (=P) regions in the j-th column, Ln_(i,j) decreases from the two ends toward the center, satisfying the relationship of Ln_(1,j), Ln_(4,j)>Ln_(2,j), Ln_(3,j). In addition, the difference in Ln between the 4 (=P) regions of the j-th column and the 4 (=P) regions of the (j+1)-th column is fixed, satisfying the relationship of Ln_(1,j)−Ln_(1,j+1)=Ln_(2,j)−Ln_(2,j+1)=Ln_(3,j)−Ln_(3,j+1)=Ln_(4,j)−Ln_(4,j+1).

In order to achieve the Ln_(i,j) distribution and the structure that substantially no insulating layer or conductive layer higher than the Ln_(i,j)-th conductive layer is present in the region (i, j), a certain number Tn_(i,j) (=N−Ln_(i,j)=12−Ln_(i,j)) of conductive layer(s) is required to be removed substantially completely in each region (i, j), and the Tn_(i,j) distribution is shown in the right half of FIG. 1B. For example, in the region (2, 3), 11 conductive layers have to be removed to expose the first conductive layer, and Tn_(2,3)=11. The Tn_(i,j) distribution can be achieved by using much less than N-1 (11) photomasks to perform the same number (M) of lithography and etching processes, with a certain combination of photomask patterns and numbers of etched conductive layers. An example of such combination is illustrated in FIG. 2.

Referring to FIG. 2, this example uses four photomasks (a case of M=4), which have photomask patterns 21, 22, 23 and 24, respectively, in the correspond area, and the order of use can be arbitrarily selected.

The photomask pattern 21 includes removal regions 212 corresponding to the pad regions where one or more conductive layers are to be removed, and non-removal regions 214 corresponding to the pad regions where no conductive layer is to be removed, wherein the removal regions 212 and non-removal regions 214 are distributed as shown in the figure. In the lithography and etching process using the photomask pattern 21, the number En_(k=1) of to-be-etched conductive layer is “1”, the number An_(i,j,k=1) of to-be-etched conductive layer in a pad region (i, j) corresponding to a removal region 212 is En_(k=1) (1), and the An_(i,j,k=1) value for a pad region (i, j) corresponding to a non-removal region 214 is 0.

The photomask pattern 22 includes removal regions 222 corresponding to the pad regions where one or more conductive layers are to be removed, and non-removal regions 224 corresponding to the pad regions where no conductive layer is to be removed, wherein the removal regions 222 and non-removal regions 224 are distributed as shown in the figure. In the lithography and etching process using the photomask pattern 22, the number En_(k=2) of to-be-etched conductive layers is “2”, the number An_(i,j,k=2) of to-be-etched conductive layers in a pad region (i, j) corresponding to a removal region 222 is En_(k=2) (2), and the An_(i,j,k=2) value for a pad region (i, j) corresponding to a non-removal region 224 is 0.

The photomask pattern 23 includes removal regions 232 corresponding to the pad regions where one or more conductive layers are to be removed, and non-removal regions 234 corresponding to the pad regions where no conductive layer is to be removed, wherein the removal regions 232 and the non-removal regions 234 are distributed as shown in the figure. In the lithography and etching process using the photomask pattern 23, the number En_(k=3) of to-be-etched conductive layer is “4”, the number An_(i,j,k=3) of to-be-etched conductive layers in a pad region (i, j) corresponding to a removal region 232 is En_(k=3) (4), and the An_(i,j,k=3) value for a pad region (i, j) corresponding to a non-removal region 234 is 0.

The photomask pattern 24 includes removal regions 242 corresponding to the pad regions where one or more conductive layers are to be removed, and non-removal regions 244 corresponding to the pad regions where no conductive layer is to be removed, wherein the removal regions 242 and non-removal regions 244 are distributed as shown in the figure. In the lithography and etching process using the photomask pattern 24, the number En_(k=4) of to-be-etched conductive layer is “4”, the number An_(i,j,k=4) of to-be-etched conductive layers in a pad region (i, j) corresponding to a removal region 242 is En_(k=4) (4), and the An_(i,j,k=4) value for a pad region (i, j) corresponding to a non-removal region 244 is 0.

The sum of the numbers of to-be-etched conductive layer(s) of the 4 (=M) lithography and etching processes is N-1 (11); that is, the sum of En_(k=1), En_(k=2), En_(k=3) and En_(k=m=4) is N-1 (11). The cumulative number of removed conductive layer(s) in each region (i, j) after the M lithography and etching processes is equal to the above number Tn_(i,j) of the conductive layer(s) requiring to be removed in the region (i, j); that is, the sum of An_(i,j,k=1), An_(i,j,k=2), An_(i,j,k=3) and An_(i,j,k=M=4) is T_(i,j). For example, the pad region (2, 2) corresponds to a removal region 212 in the photomask pattern 21, a removal region 222 in the photomask pattern 22, a removal region 232 in the photomask pattern 23, and a non-removal region 244 in the photomask pattern 24, namely An_(2,2,k=1)=En_(k=1)=1, An_(2,2,k=2)=En_(k=2)=2, An_(2,2,k=3)=En_(k=3)=4 and An_(2,2,k=M=4)=0, the sum of which is Tn_(2,2)=7 (FIG. 1B).

In addition, the conductive layers 104 may include a metal material, N-doped polysilicon, P-doped polysilicon, or a combination thereof, and the insulating layers 102 may include silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.

After the contact pad structure 100 in which the respective conductive layers 104 are exposed is formed, it is possible to form an upper insulating layer (not shown) over it and then form in the same a plurality of contact plugs (not shown) having different depths to electrically connect the respective conductive layers 104 in the contact pad structure 100.

FIG. 3A illustrates a perspective view of a contact pad structure of another example according to the first embodiment of this invention. FIG. 3B illustrates a top view of the contact pad structure illustrated in FIG. 3A, wherein the number Ln_(i,j) of the conductive layer exposed in each region and the number Tn_(i,j) of the conductive layer(s) requiring to be removed in each region are shown.

Referring to FIGS. 3A and 3B, the contact pad structure 300 of this example also includes 12 conductive layers, but the 12 regions exposing the respective conductive layers 104 are arranged in a 6×2 array. This corresponds to a case of N=12, P=6 and Q=2. The i-direction and the j-direction are defined as above.

The number Ln_(i,j) of the conductive layer exposed in each region (i, j) (i=1-6, j=1-2) is shown in the left part of FIG. 3B. In the 2 (=Q) regions in the i-th row, Ln_(i,j) decreases with increase of the j-value, satisfying the relationship of Ln_(i,1)>Ln_(i,2). The difference in Ln between the 2 (=Q) regions of the i-th row and the 2 (=Q) regions of the (i+1)-th row is fixed, satisfying the relationship of Ln_(i,1)−Ln_(i+1,1)=Ln_(i,2)−Ln_(i+1,2). In the 6 (=P) regions in the j-th column, Ln_(i,j) decreases from the two ends toward the center, satisfying the relationship of Ln_(1,j), Ln_(6,j)>Ln_(2,j), Ln_(5,j)>Ln_(3,j), Ln_(4,j). In addition, the difference in Ln between the 6 (=P) regions of the 1^(st) column and the 6 (=P) regions of the 2^(nd) column is fixed, satisfying the relationship of Ln_(1,1)−Ln_(1,2)=Ln_(2,1)−Ln_(2,2)=Ln_(3,1)−Ln_(3,2)=Ln_(4,1)−Ln_(4,2)=Ln_(5,1)−Ln_(5,2)=Ln_(6,1)−Ln_(6,2).

The number Tn_(i,j) (=N−Ln_(i,j)=12−Ln_(i,j)) of the conductive layer(s) requiring to be removed substantially completely in each region (i, j) in order to achieve the Ln_(i,j) distribution and the structure that substantially no insulating layer or conductive layer higher than the Ln_(i,j)-th conductive layer is present in the region (i, j) is shown in the right part of FIG. 3B. The Tn_(i,j) distribution can be achieved by using much less than N-1 (11) photomasks to perform the same number (M) of lithography and etching processes, with a certain combination of photomask patterns and numbers of etched conductive layers. An example of such combination is illustrated in FIG. 4.

A shown in FIG. 4, this example uses four photomasks (a case of M=4), which have photomask patterns 31, 32, 33 and 34, respectively, in the correspond area, and the order of use can be arbitrarily selected.

The photomask pattern 31 includes removal regions 312 corresponding to the pad regions where one or more conductive layers are to be removed, and non-removal regions 314 corresponding to the pad regions where no conductive layer is to be removed, wherein the removal regions 312 and non-removal regions 314 are distributed as shown in the figure. In the lithography and etching process using the photomask pattern 31, the number En_(k=1) of to-be-etched conductive layer is “1”, the number An_(i,j,k=1) of to-be-etched conductive layer in a pad region (i, j) corresponding to a removal region 312 is En_(k=1) (1), and the An_(i,j,k=1) value for a pad region (i, j) corresponding to a non-removal region 314 is 0.

The photomask pattern 32 includes removal regions 322 corresponding to the pad regions where one or more conductive layers are to be removed, and non-removal regions 324 corresponding to the pad regions where no conductive layer is to be removed, wherein the removal regions 322 and non-removal regions 324 are distributed as shown in the figure. In the lithography and etching process using the photomask pattern 32, the number En_(k=2) of to-be-etched conductive layers is “2”, the number An_(i,j,k=2) of to-be-etched conductive layers in a pad region (i, j) corresponding to a removal region 322 is En_(k=2) (2), and the An_(i,j,k=2) value for a pad region (i, j) corresponding to a non-removal region 324 is 0.

The photomask pattern 33 includes removal regions 332 corresponding to the pad regions where one or more conductive layers are to be removed, and non-removal regions 334 corresponding to the pad regions where no conductive layer is to be removed, wherein the removal regions 332 and the non-removal regions 334 are distributed as shown in the figure. In the lithography and etching process using the photomask pattern 33, the number En_(k=3) of to-be-etched conductive layer is “4”, the number An_(i,j,k=3) of to-be-etched conductive layers in a pad region (i, j) corresponding to a removal region 332 is En_(k=3) (4), and the An_(i,j,k=3) value for a pad region (i, j) corresponding to a non-removal region 334 is 0.

The photomask pattern 34 includes removal regions 342 corresponding to the pad regions where one or more conductive layers are to be removed, and non-removal regions 344 corresponding to the pad regions where no conductive layer is to be removed, wherein the removal regions 342 and non-removal regions 344 are distributed as shown in the figure. In the lithography and etching process using the photomask pattern 34, the number En_(k=4) of to-be-etched conductive layer is “4”, the number An_(i,j,k=4) of to-be-etched conductive layers in a pad region (i, j) corresponding to a removal region 342 is En_(k=4) (4), and the An_(i,j,k=4) value for a pad region (i, j) corresponding to a non-removal region 344 is 0.

The sum of the numbers of to-be-etched conductive layer(s) of the 4 (=M) lithography and etching processes is N-1 (11); that is, the sum of En_(k=1), En_(k=2), En_(k=3) and En_(k=M=4) is N-1 (11). The cumulative number of removed conductive layer(s) in each region (i, j) after the M lithography and etching processes is equal to the above number Tn_(i,j) of the conductive layer(s) requiring to be removed in the region (i, j); that is, the sum of An_(i,j,k=1), An_(i,j,k=2), An_(i,j,k=3) and An_(i,j,k=M=4) is Tn_(i,j). For example, the pad region (2, 2) corresponds to a removal region 312 in the photomask pattern 31, a non-removal region 324 in the photomask pattern 32, a removal region 332 in the photomask pattern 33, and a non-removal region 344 in the photomask pattern 34, namely An_(2,2,k=1)=En_(k=1)=1, An_(2,2,k=2)=0, An_(2,2,k=3)=En_(k=3)=4 and An_(2,2,k=M=4)=0, the sum of which is Tn_(2,2)=5.

FIG. 5A illustrates a top view of a contact pad structure of an example according to a second embodiment of this invention, wherein the number Tn_(i,j) of the conductive layer(s) requiring to be removed in each region is shown. FIG. 5B illustrates a B-B′ cross-sectional view of the contact pad structure illustrated in FIG. 5A.

Referring to FIGS. 5A and 5B, the Tn_(i,j) distribution of the contact pad structure 500 is the same as that shown in FIG. 1B, and the combination of photomask pattern distributions and numbers of etched conductive layers for its formation may be the same as that shown in FIG. 2. However, in any region (i, j) other than the region exposing the upmost N-th conductive layer, each insulating layer 102 and each conductive layer 104 above the Ln_(i,j)-th conductive layer is merely partially removed in the M lithography and etching processes, so that a contact hole 106 is formed in the layers 102 and 104 above the Ln_(i,j)-th conductive layer and the Ln_(i,j)-th conductive layer is exposed in the contact hole 106.

After the M lithography and etching processes, a spacer 108 may be formed on the sidewall of each contact hole 106, so that the contact plug of the L_(i,j)-th conductive layer that will be formed later in the contact hole 106 in the region (i, j) can be insulated from the conductive layer(s) 104 above the region (i, j) Ln_(i,j)-th conductive layer. The spacer 108 may include silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.

The above contact pad structure 100, 300 or 500 of the above embodiments may be disposed in a 3D memory.

For the contact pad structure of this invention can be formed with much less than N-1 times (e.g., 4 times) of lithography and etching processes for N (e.g., 12) levels of devices, the formation process can be significantly simplified, and the process control is easier.

This invention has been disclosed above in the preferred embodiments, but is not limited to those. It is known to persons skilled in the art that some modifications and innovations may be made without departing from the spirit and scope of this invention. Hence, the scope of this invention should be defined by the following claims. 

What is claimed is:
 1. A contact pad structure, comprising alternately stacked N insulating layers (N≧6) and N conductive layers, and having N regions exposing the respective conductive layers, wherein the regions are arranged in a P×Q array (P≧3, Q≧2), and when the conductive layers are numbered from first to N-th from bottom to top and the conductive layer exposed in a region (i, j) is designated as an Ln_(i,j)-th conductive layer, in the Q regions in the i-th row, Ln_(i,j) decreases with increase of the j value, satisfying the relationships of Ln_(i,1)>Ln_(i,2)> . . . >Ln_(i,Q), a difference in Ln between the Q regions of the i-th row and the Q regions of the (i+1)-th row is fixed, satisfying the relationship of Ln_(i,1)−Ln_(i+1,1)=Ln_(i,2)−Ln_(i+1,2)= . . . =Ln_(i,Q)−Ln_(i+1,Q), in the P regions of the j-th column, Ln_(i,j) decreases from two ends toward a center, satisfying the relationship of Ln_(1,j), Ln_(P,j)>Ln_(2,j), Ln_(P−1,j)> . . . , and a difference in Ln between the P regions of the j-th column and the P regions of the (j+1)-th column is fixed, satisfying the relationship of Ln_(1,j)−Ln_(1,j+1)=Ln_(2,j)−Ln_(2,j+1)= . . . =Ln_(P,j)−Ln_(P,j+1).
 2. The contact pad structure of claim 1, wherein substantially no insulating layer or conductive layer higher than the Ln_(i,j)-th conductive layer is present in the region (i, j).
 3. The contact pad structure of claim 1, wherein in the region (i, j) other than the region exposing the N-th conductive layer, the Ln_(i,j)-th conductive layer is exposed in a contact hole formed in upper layers among the insulating layers and the conductive layers.
 4. The contact pad structure of claim 3, further comprising a spacer disposed on a sidewall of each contact hole.
 5. The contact pad structure of claim 1, wherein P≧3 and Q≧2.
 6. The contact pad structure of claim 1, which is disposed on a 3D memory. 